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oai:recercat.cat:2117/3291932026-02-04T08:33:29Zcom_2072_1033col_2072_452950

Shedding light on the negative differential resistance effect observed in organic thin-film transistors Ros Costals, Eloi Reig Canyelles, Marta Voz Sánchez, Cristóbal Bagdziunas, Gintautas Ortega Villasclaras, Pablo Rafael Velasco Castrillo, Maria Dolores Puigdollers i González, Joaquim Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors Transistors Organic semiconductors Organic field-effect transistor OFET Negative differential resistance Density of states Energy levels NDR Transistors Semiconductors orgànics This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/acsaelm.0c00183 Organic semiconductor electronics has the potential to become a solid and industrially feasible technology, with new and stimulating applications such as the flexible and transparent electronic devices. However, organic devices still have some drawbacks that must be solved to assure quality and reliability in complex electronic systems. In this work, we focus our attention to the physical origin involved in the negative differential resistance phenomenon, often observed in the output electrical characteristics of organic thin-film transistors but rarely analyzed. This work was supported by the Spanish Government throughProjects ENE2016-78933-C4-1-R, ENE2017-87671-C3-2-R,and TEC2017-82305-R. Peer Reviewed Postprint (author's final draft) 2020-05-05 Article Ros, E. [et al.]. Shedding light on the negative differential resistance effect observed in organic thin-film transistors. "ACS applied electronic materials", 5 Maig 2020, vol. 2, núm. 6, p. 1574-1582. 2637-6113 https://hdl.handle.net/2117/329193 10.1021/acsaelm.0c00183 eng https://pubs.acs.org/doi/full/10.1021/acsaelm.0c00183 info:eu-repo/grantAgreement/MINECO/1PE/ENE2016-78933-C4-1-R info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/ENE2017-87671-C3-2-R/ES/DISPOSITIVOS HIBRIDOS DE SILICIO%2FCALCOGENURO DE CAPA DELGADA PARA TECNOLOGIAS FOTOVOLTAICOS SOSTENIBLES DE BAJO COSTE Y MUY ALTA EFICIENCIA/ info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/TEC2017-82305-R/ES/CELULAS SOLARES CON CONTACTOS POSTERIORES BASADAS EN SUBSTRATOS DELGADOS DE SILICIO CRISTALINO/ Open Access 9 p. application/pdf