<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-17T01:10:44Z</responseDate><request verb="GetRecord" identifier="oai:www.recercat.cat:2117/28551" metadataPrefix="oai_dc">https://recercat.cat/oai/request</request><GetRecord><record><header><identifier>oai:recercat.cat:2117/28551</identifier><datestamp>2026-01-30T07:35:13Z</datestamp><setSpec>com_2072_1033</setSpec><setSpec>col_2072_452950</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
   <dc:title>Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films</dc:title>
   <dc:creator>Vendrell Villafruela, Xavier</dc:creator>
   <dc:creator>Raymond, Oscar</dc:creator>
   <dc:creator>Ochoa Guerrero, Diego A.</dc:creator>
   <dc:creator>García García, José Eduardo</dc:creator>
   <dc:creator>Mestres, Lourdes</dc:creator>
   <dc:contributor>Universitat Politècnica de Catalunya. Departament de Física Aplicada</dc:contributor>
   <dc:contributor>Universitat Politècnica de Catalunya. CEMAD - Caracterització Elèctrica de Materials i Dispositius</dc:contributor>
   <dc:subject>Àrees temàtiques de la UPC::Física</dc:subject>
   <dc:subject>Ferroelectric thin films</dc:subject>
   <dc:subject>Pyrolysis</dc:subject>
   <dc:subject>Ceramics</dc:subject>
   <dc:subject>Chemical solution deposition</dc:subject>
   <dc:subject>(K0.5Na0.5)NbO3</dc:subject>
   <dc:subject>Ferroelectric</dc:subject>
   <dc:subject>Thin films</dc:subject>
   <dc:subject>Pyrolysis temperature</dc:subject>
   <dc:subject>Electrical-properties</dc:subject>
   <dc:subject>Ceramics</dc:subject>
   <dc:subject>Ferroelectricitat</dc:subject>
   <dc:subject>Piròlisi</dc:subject>
   <dc:subject>Ceràmica</dc:subject>
   <dc:description>Lead-free (K,Na)NbO3 (KNN) and La doped (K,Na)NbO3 (KNN-La) thin films are grown on SrTiO3 substrates using the chemical solution deposition method. The effect of adding different amounts of Na and K excess (0-20 mol%) is investigated. The results confirm the necessity of adding 20 mol% excess amounts of Na and K precursor solutions in order to avoid the formation of the secondary phase, K4Nb6O17, as confirmed by X-ray diffraction and Raman spectroscopy. Moreover, when adding a 20 mol% of alkaline metal excess, the thin films are highly textured with out-of-plane preferential orientation in the [100] direction of the [100] orientation of the substrate. Doping with lanthanum results in a decrease of the leakage current density at low electric field, and an increase in the dielectric permittivity across the whole temperature range (80-380 K). Although the (100)-oriented KNN and KNN-La films exhibited rounded hysteresis loops, at low temperatures the films show the typical ferroelectric hysteresis loops. (C) 2015 Elsevier B.V. All rights reserved.</dc:description>
   <dc:description>Postprint (author’s final draft)</dc:description>
   <dc:date>2015-02-27</dc:date>
   <dc:type>Article</dc:type>
   <dc:identifier>Vendrell, X. [et al.]. Growth and physical properties of highly oriented La-doped (K,Na)NbO3 ferroelectric thin films. "Thin solid films", 27 Febrer 2015, vol. 577, p. 35-41.</dc:identifier>
   <dc:identifier>0040-6090</dc:identifier>
   <dc:identifier>https://hdl.handle.net/2117/28551</dc:identifier>
   <dc:identifier>10.1016/j.tsf.2015.01.038</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>http://www.sciencedirect.com/science/article/pii/S0040609015000723</dc:relation>
   <dc:rights>http://creativecommons.org/licenses/by-nc-nd/3.0/es/</dc:rights>
   <dc:rights>Open Access</dc:rights>
   <dc:rights>Attribution-NonCommercial-NoDerivs 3.0 Spain</dc:rights>
   <dc:format>7 p.</dc:format>
   <dc:format>application/pdf</dc:format>
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