2026-04-05T12:49:35Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/232072026-02-04T04:56:06Zcom_2072_1033col_2072_452950

Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers Altet Sanahujes, Josep González, José Luis Gómez Salinas, Dídac Perpiñà Gilabet, Xavier Claeys, Wilfrid Grauby, Stéphane Dufis, Cédric Yvan Vellvehi, Miquel Mateo Peña, Diego Reverter Cubarsí, Ferran Dilhaire, Stefan Jordà, Xavier Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats Integrated circuits CMOS differential temperature sensors CMOS integrated circuits Electro-thermal characterization IR camera measurements Laser interferometer measurements Thermal coupling characterization Circuits integrats This paper reports on the design solutions and the different measurements we have done in order to characterize the thermal coupling and the performance of differential temperature sensors embedded in an integrated circuit implemented in a 65 nm CMOS technology. The on-chip temperature increases have been generated using diode-connected MOS transistors behaving as heat sources. Temperature measurements performed with the embedded sensor are corroborated with an infra-red camera and a laser interferometer used as thermometer. A 2 GHz linear power amplifier (PA) is as well embedded in the same silicon die. In this paper we show that temperature measurements performed with the embedded temperature sensor can be used to monitor the PA DC behavior and RF activity. Peer Reviewed Postprint (published version) 2014-05 Article http://www.sciencedirect.com/science/article/pii/S0026269214000354 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ Restricted access - publisher's policy Attribution-NonCommercial-NoDerivs 3.0 Spain