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Boron diffused emitters passivated with Al2O3 films Masmitjà Rusiñol, Gerard Ortega Villasclaras, Pablo Rafael López Rodríguez, Gema Calle Martín, Eric García Molina, Francisco Miguel Martín García, Isidro Orpella García, Alberto Voz Sánchez, Cristóbal Alcubilla González, Ramón Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica Boron Silicones Boron Atomic layer deposition Electron devices Passivation Silicon Silicon wafers Solar cells Bor Silicones In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation. Peer Reviewed Postprint (published version) 2013 Conference report Masmitja, G. [et al.]. Boron diffused emitters passivated with Al2O3 films. A: Spanish Conference on Electron Devices. "Proceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain". Valladolid: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 329-332. 978-1-4673-4666-5 https://hdl.handle.net/2117/19570 10.1109/CDE.2013.6481409 eng http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6481409&contentType=Conference+Publications&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6481319%29%26rowsPerPage%3D100 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ Restricted access - publisher's policy Attribution-NonCommercial-NoDerivs 3.0 Spain 4 p. application/pdf Institute of Electrical and Electronics Engineers (IEEE)