2026-04-13T15:07:46Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/195702026-02-11T08:30:46Zcom_2072_1033col_2072_452950

00925njm 22002777a 4500 dc Masmitjà Rusiñol, Gerard author Ortega Villasclaras, Pablo Rafael author López Rodríguez, Gema author Calle Martín, Eric author García Molina, Francisco Miguel author Martín García, Isidro author Orpella García, Alberto author Voz Sánchez, Cristóbal author Alcubilla González, Ramón author 2013 In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation. Peer Reviewed Postprint (published version) Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica Boron Silicones Boron Atomic layer deposition Electron devices Passivation Silicon Silicon wafers Solar cells Bor Silicones Boron diffused emitters passivated with Al2O3 films