2026-04-17T11:29:54Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/195702026-02-11T08:30:46Zcom_2072_1033col_2072_452950

urn:hdl:2117/19570 Boron diffused emitters passivated with Al2O3 films Masmitjà Rusiñol, Gerard Ortega Villasclaras, Pablo Rafael López Rodríguez, Gema Calle Martín, Eric García Molina, Francisco Miguel Martín García, Isidro Orpella García, Alberto Voz Sánchez, Cristóbal Alcubilla González, Ramón Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica Boron Silicones Boron Atomic layer deposition Electron devices Passivation Silicon Silicon wafers Solar cells Bor Silicones In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation. Peer Reviewed Postprint (published version) 2013 Conference report http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6481409&contentType=Conference+Publications&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6481319%29%26rowsPerPage%3D100 http://creativecommons.org/licenses/by-nc-nd/3.0/es/ Restricted access - publisher's policy Attribution-NonCommercial-NoDerivs 3.0 Spain Institute of Electrical and Electronics Engineers (IEEE)