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oai:recercat.cat:2117/1312302026-02-07T08:22:36Zcom_2072_1033col_2072_452950

urn:hdl:2117/131230 Analysis of the conductance transient in thick film tin oxide gas sensors Vilanova, X Llobet Valero, Eduard Alcubilla González, Ramón Sueiras, Jl Correig, X Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors Detectors Tin oxide Thick films Conductance transient Diffusion-reaction model Porosity Detectors In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the theoretical calculations based on a non-linear diffusion-reaction model and the experimental results alloy a constant, t', to be estimated, which is independent of the final conductance value and depends, among other parameters, on the effective diffusion coefficients of vapours in the porous tin oxide sensor. From transient measurements of organic solvents (benzene and o-xylene) we have obtained t' values that are independent of concentration and characteristic for each vapour. This new parameter can give useful information for gas/vapour recognition. Peer Reviewed Postprint (published version) 1996-03 Article https://www.sciencedirect.com/science/article/pii/0925400596800633 Restricted access - publisher's policy Elsevier