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TFET-Based power management circuit for RF energy harvesting Nunes Cavalheiro, David Manuel Moll Echeto, Francisco de Borja Valtchev, Stanimir Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions Àrees temàtiques de la UPC::Enginyeria elèctrica Energy harvesting Energy harvesting power management radio-frequency tunnel FET UHF ultra-low power Enginyeria elèctrica Energia Energia -- Captació This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a result, improved efficiencies in RF-powered circuits are achieved, thanks to increased rectification performance at low power levels and to the reduced energy required for a proper PMC operation. It is shown by simulations that heterojunction TFET devices designed with III-V materials can improve the rectification process at received power levels below -20 dBm (915 MHz) when compared to the application of homojunction III-V TFETs and Si FinFETs. For an available power of -25 dBm, the proposed converter is able to deliver 1.1 µW of average power (with 0.5 V) to the output load with a boost efficiency of 86%. Postprint (author's final draft) 2016-11-14 Article Nunes, D., Moll, F., Valtchev, S. TFET-Based power management circuit for RF energy harvesting. "IEEE Journal of the Electron Devices Society", 14 Novembre 2016, vol. 5, núm. 1, p. 7-17. 2168-6734 https://hdl.handle.net/2117/105661 10.1109/JEDS.2016.2619908 eng http://ieeexplore.ieee.org/document/7742921/ http://creativecommons.org/licenses/by-nc-nd/3.0/es/ Open Access Attribution-NonCommercial-NoDerivs 3.0 Spain 11 p. application/pdf