2026-04-13T06:58:19Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/1056612026-01-24T06:22:40Zcom_2072_1033col_2072_452950

urn:hdl:2117/105661 TFET-Based power management circuit for RF energy harvesting Nunes Cavalheiro, David Manuel Moll Echeto, Francisco de Borja Valtchev, Stanimir Àrees temàtiques de la UPC::Enginyeria elèctrica Energy harvesting Energy harvesting power management radio-frequency tunnel FET UHF ultra-low power Enginyeria elèctrica Energia Energia -- Captació This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a result, improved efficiencies in RF-powered circuits are achieved, thanks to increased rectification performance at low power levels and to the reduced energy required for a proper PMC operation. It is shown by simulations that heterojunction TFET devices designed with III-V materials can improve the rectification process at received power levels below -20 dBm (915 MHz) when compared to the application of homojunction III-V TFETs and Si FinFETs. For an available power of -25 dBm, the proposed converter is able to deliver 1.1 µW of average power (with 0.5 V) to the output load with a boost efficiency of 86%. Postprint (author's final draft) 2016-11-14 Article http://ieeexplore.ieee.org/document/7742921/ http://creativecommons.org/licenses/by-nc-nd/3.0/es/ Open Access Attribution-NonCommercial-NoDerivs 3.0 Spain