2026-04-17T05:27:38Zhttps://recercat.cat/oai/request

oai:recercat.cat:2117/1049742026-01-13T05:37:20Zcom_2072_1033col_2072_452950

00925njm 22002777a 4500 dc Masmitjà Rusiñol, Gerard author Gerling Sarabia, Luis Guillermo author Ortega Villasclaras, Pablo Rafael author Puigdollers i González, Joaquim author Martín García, Isidro author Voz Sánchez, Cristóbal author Alcubilla González, Ramón author 2017-05-21 Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use of both a thin and high quality intrinsic amorphous Si layer and TCO (Transparent Conductive Oxide) films. In this work, we explore the use of vanadium suboxide (V2Ox) capped with a thin Ni layer as a hole transport layer trying to avoid both the intrinsic amorphous silicon layer and the TCO contact layer. Obtained figures of merit for Ni/V2Ox/c-Si(n) test samples are saturation current densities of 175 fA cm-2 and specific contact resistance below 115 mO cm2 on 40 nm thick V2Ox layers. Finally, the Ni/V2Ox stack is used with an interdigitated back-contacted c-Si(n) solar cell architecture fully fabricated at low temperatures. An open circuit voltage, a short circuit current and a fill factor of 656 mV, 40.7 mA cm-2 and 74.0% are achieved, respectively, leading to a power conversion efficiency of 19.7%. These results confirm the high potential of Ni/V2Ox stacks as hole-selective contacts on crystalline silicon photovoltaics. Peer Reviewed Postprint (published version) Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars Solar cells Transition metal oxide layers TCO Transparent conductive oxide Vanadium suboxide V2Ox Ni/V2Ox Crystalline silicon photovoltaics Cèl·lules solars V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells