2026-04-13T01:48:44Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4888382025-11-09T13:02:35Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Mavredakis, Nikolaos author Jiménez Jiménez, David author 2021 Altres ajuts: Reference of the GraphCAT project: 001-P-001702 The bias dependence of input-referred low-frequency noise (LFN), SVG, is a considerable facet for RF circuit design. SVG was considered constant in CMOS but this was contradicted by recent experimental and theoretical studies. In this brief, the behavior of SVG is investigated for single-layer graphene transistors (GFETs) based on a recently established physics-based compact model. A minimum of SVG is recorded at the bias point where transconductance is maximum which coincides with the peak of the well-known M-shape of the normalized output LFN; the model precisely captures this trend. Mobility fluctuation effect increases SVG toward lower currents near charge neutrality point (CNP), while carrier number fluctuation and series resistance effects mostly contribute away from CNP; thus, SVG obtains a parabolic shape versus gate voltage similar to CMOS devices. http://hdl.handle.net/2072/488838 Circuit design Compact model Graphene transistor (GFET) Input-referred low-frequency noise (LFN) Input-Referred Low-Frequency Noise Analysis for Single-Layer Graphene FETs