2026-04-13T01:24:25Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4642572026-03-13T10:31:59Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Xiao, Peng author Chávez Ángel, Emigdio author Chaitoglou, Stefanos author Sledzinska, Marianna author Dimoulas, Athanasios author Sotomayor Torres, Clivia M. author Sachat, Alexandros el author 2021 Altres ajuts: this work has been supported by the CERCA Programme/Generalitat de Catalunya. The degree of thermal anisotropy affects critically key device-relevant properties of layered two-dimensional materials. Here, we systematically study the in-plane and cross-plane thermal conductivity of crystalline SnSe2 films of varying thickness (16-190 nm) and uncover a thickness-independent thermal conductivity anisotropy ratio of about ∼8.4. Experimental data obtained using Raman thermometry and frequency domain thermoreflectance showed that the in-plane and cross-plane thermal conductivities monotonically decrease by a factor of 2.5 with decreasing film thickness compared to the bulk values. Moreover, we find that the temperature-dependence of the in-plane component gradually decreases as the film becomes thinner, and in the range from 300 to 473 K it drops by more than a factor of 2. Using the mean free path reconstruction method, we found that phonons with MFP ranging from ∼1 to 53 and from 1 to 30 nm contribute to 50% of the total in-plane and cross-plane thermal conductivity, respectively. Phonon transport Mean free path SnSe2 Thermal conductivity anisotropy Frequency-domain thermoreflectance Raman thermometry Anisotropic thermal conductivity of crystalline layered SnSe2