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               <dc:title>Anisotropic thermal conductivity of crystalline layered SnSe2</dc:title>
               <dc:creator>Xiao, Peng</dc:creator>
               <dc:creator>Chávez Ángel, Emigdio</dc:creator>
               <dc:creator>Chaitoglou, Stefanos</dc:creator>
               <dc:creator>Sledzinska, Marianna</dc:creator>
               <dc:creator>Dimoulas, Athanasios</dc:creator>
               <dc:creator>Sotomayor Torres, Clivia M.</dc:creator>
               <dc:creator>Sachat, Alexandros el</dc:creator>
               <dc:subject>Phonon transport</dc:subject>
               <dc:subject>Mean free path</dc:subject>
               <dc:subject>SnSe2</dc:subject>
               <dc:subject>Thermal conductivity anisotropy</dc:subject>
               <dc:subject>Frequency-domain thermoreflectance</dc:subject>
               <dc:subject>Raman thermometry</dc:subject>
               <dc:description>Altres ajuts: this work has been supported by the CERCA Programme/Generalitat de Catalunya.</dc:description>
               <dc:description>The degree of thermal anisotropy affects critically key device-relevant properties of layered two-dimensional materials. Here, we systematically study the in-plane and cross-plane thermal conductivity of crystalline SnSe2 films of varying thickness (16-190 nm) and uncover a thickness-independent thermal conductivity anisotropy ratio of about ∼8.4. Experimental data obtained using Raman thermometry and frequency domain thermoreflectance showed that the in-plane and cross-plane thermal conductivities monotonically decrease by a factor of 2.5 with decreasing film thickness compared to the bulk values. Moreover, we find that the temperature-dependence of the in-plane component gradually decreases as the film becomes thinner, and in the range from 300 to 473 K it drops by more than a factor of 2. Using the mean free path reconstruction method, we found that phonons with MFP ranging from ∼1 to 53 and from 1 to 30 nm contribute to 50% of the total in-plane and cross-plane thermal conductivity, respectively.</dc:description>
               <dc:date>2021</dc:date>
               <dc:type>Article</dc:type>
               <dc:relation>European Commission 754558</dc:relation>
               <dc:relation>European Commission 289061</dc:relation>
               <dc:relation>Agencia Estatal de Investigación SEV-2017-0706</dc:relation>
               <dc:relation>Agencia Estatal de Investigación PGC2018-101743-B-I00</dc:relation>
               <dc:relation>Nano letters ; Vol. 21, issue 21 (Nov. 2021), p. 9172-9179</dc:relation>
               <dc:rights>open access</dc:rights>
               <dc:rights>Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.</dc:rights>
               <dc:rights>https://creativecommons.org/licenses/by-nc-nd/4.0/</dc:rights>
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