2026-04-14T03:52:47Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4621472026-03-13T10:15:35Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Çınar, Mustafa Neşet author Antidormi, Aleandro author Nguyen, Viet-Hung author Kovtun, Alessandro author Lara-Avila, Samuel author Liscio, Andrea author Charlier, Jean Christophe author Roche, Stephan author Sevinçli, Hâldun author 2022 Altres ajuts: ICN2 is funded by the CERCA Programme/Generalitat de Catalunya. In the context of graphene-based composite applications, a complete understanding of charge conduction in multilayer reduced graphene oxides (rGO) is highly desirable. However, these rGO compounds are characterized by multiple and different sources of disorder depending on the chemical method used for their synthesis. Most importantly, the precise role of interlayer interaction in promoting or jeopardizing electronic flow remains unclear. Here, thanks to the development of a multiscale computational approach combining first-principles calculations with large-scale transport simulations, the transport scaling laws in multilayer rGO are unraveled, explaining why diffusion worsens with increasing film thickness. In contrast, contacted films are found to exhibit an opposite trend when the mean free path becomes shorter than the channel length, since conduction becomes predominantly driven by interlayer hopping. These predictions are favorably compared with experimental data and open a road toward the optimization of graphene-based composites with improved electrical conduction. Disordered van der Waals thin films Reduced graphene oxides Charge transport Quantum transport Interlayer transport Multilayer transport scaling law Toward optimized charge transport in multilayer reduced graphene oxides