2026-04-14T03:37:21Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4613692026-03-13T10:09:24Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Aguirre, Fernando Leonel author Suñé, Jordi author Miranda, Enrique Alberto author 2022 This paper reports the fundamentals and the SPICE implementation of the Dynamic Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching (RS) devices. Following Prof. Chua's memristive devices theory, the memdiode model comprises two equations, one for the electron transport based on a heuristic extension of the quantum point-contact model for filamentary conduction in thin dielectrics and a second equation for the internal memory state related to the reversible displacement of atomic species within the oxide film. The DMM represents a breakthrough with respect to the previous Quasi-static Memdiode Model (QMM) since it describes the memory state of the device as a balance equation incorporating both the snapback and snapforward effects, features of utmost importance for the accurate and realistic simulation of the RS phenomenon. The DMM allows simple setting of the initial memory condition as well as decoupled modeling of the set and reset transitions. The model equations are implemented in the LTSpice simulator using an equivalent circuital approach with behavioral components and sources. The practical details of the model implementation and its modes of use are also discussed. Memristor Resistive switching Memory Memdiode SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices