2026-04-13T03:05:22Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4572612026-03-13T07:46:00Zcom_2072_98col_2072_378192

urn:hdl:2072/457261 Statistical characterization of time-dependent variability defects using the maximum current fluctuation Saraza-Canflanca, Pablo Martin Martinez, Javier Castro-Lopez, Rafael Roca, Elisenda Rodríguez Martínez, Rosana Fernandez, Francisco V. Nafría i Maqueda, Montserrat Bias temperature instability (BTI) Maximum current fluctuation (MCF) Random telegraph noise (RTN) Time-dependent variability (TDV) Transistor This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. Unlike traditional approaches based on complex and time-consuming individual analysis of thousands of current traces, the proposed approach uses a simpler trace processing, since only the maximum and minimum values of the drain current during a given time interval are needed. Moreover, this extraction method can also estimate defects causing small current shifts, which can be very complex to identify by traditional means. Experimental data in a wide range of gate voltages, from near-threshold up to nominal operation conditions, are analyzed with the proposed methodology. 2021 Article Ministerio de Ciencia e Innovación PID2019-103869RB Agencia Estatal de Investigación BES-2017-080160 Ministerio de Economía y Competitividad TEC2016-75151-C3 IEEE Transactions on Electron Devices ; Vol. 68, issue 8 (Aug. 2021), p. 4039-4044 open access Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets. https://rightsstatements.org/vocab/InC/1.0/