2026-04-13T03:57:22Zhttps://recercat.cat/oai/request
oai:recercat.cat:2072/4571152024-12-06T02:51:21Zcom_2072_98col_2072_378192
RECERCAT author Ruiz, Ana author Claramunt, Sergi author Crespo Yepes, Albert author Porti i Pujal, Marc author Nafría i Maqueda, Montserrat author Xu, H. author Liu, C. author Wu, Q. 2021 Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier (CHC) degradation has been induced to provoke some damage in the studied devices. The results show that the use of the two KPFM configurations, together with their nanoscale resolution, provides additional information about the damage in the different regions/materials of the devices, allowing to correlate device level characteristics with the nanoscale material properties. open access Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades. https://creativecommons.org/licenses/by-nc-nd/4.0/ CHC Device level KPFM Nanoscale NBTI OTFTs Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties Article