2026-04-14T02:49:50Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4571152024-12-06T02:51:21Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Ruiz, Ana author Claramunt, Sergi author Crespo Yepes, Albert author Porti i Pujal, Marc author Nafría i Maqueda, Montserrat author Xu, H. author Liu, C. author Wu, Q. author 2021 Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier (CHC) degradation has been induced to provoke some damage in the studied devices. The results show that the use of the two KPFM configurations, together with their nanoscale resolution, provides additional information about the damage in the different regions/materials of the devices, allowing to correlate device level characteristics with the nanoscale material properties. CHC Device level KPFM Nanoscale NBTI OTFTs Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering Materials Chemistry Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties