<?xml version="1.0" encoding="UTF-8"?><?xml-stylesheet type="text/xsl" href="static/style.xsl"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-04-19T16:14:31Z</responseDate><request verb="GetRecord" identifier="oai:www.recercat.cat:2072/438549" metadataPrefix="oai_dc">https://recercat.cat/oai/request</request><GetRecord><record><header><identifier>oai:recercat.cat:2072/438549</identifier><datestamp>2025-02-25T09:48:51Z</datestamp><setSpec>com_2072_98</setSpec><setSpec>col_2072_378192</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:doc="http://www.lyncode.com/xoai" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
   <dc:title>Nonlinear heat transport in superlattices with mobile defects</dc:title>
   <dc:creator>Jou i Mirabent, David,</dc:creator>
   <dc:creator>Restuccia, Liliana</dc:creator>
   <dc:creator>University of Messina</dc:creator>
   <dc:subject>Heat transport</dc:subject>
   <dc:subject>Extended thermodynamics</dc:subject>
   <dc:subject>Mobile defects</dc:subject>
   <dc:subject>Defect engineering</dc:subject>
   <dc:subject>Thermal</dc:subject>
   <dc:subject>Transistor</dc:subject>
   <dc:subject>Superlattices</dc:subject>
   <dc:description>We consider heat conduction in a superlattice with mobile defects, which reduce the thermal conductivity of the material. If the defects may be dragged by the heat flux, and if they are stopped at the interfaces of the superlattice, it is seen that the effective thermal resistance of the layers will depend on the heat flux. Thus, the concentration dependence of the transport coefficients plus the mobility of the defects lead to a strongly nonlinear behavior of heat transport, which may be used in some cases as a basis for thermal transistors.</dc:description>
   <dc:date>2019</dc:date>
   <dc:type>Article</dc:type>
   <dc:identifier>https://ddd.uab.cat/record/216819</dc:identifier>
   <dc:identifier>urn:10.3390/e21121200</dc:identifier>
   <dc:identifier>urn:oai:ddd.uab.cat:216819</dc:identifier>
   <dc:identifier>urn:wos_id:000507375900068</dc:identifier>
   <dc:identifier>urn:altmetric_id:72475506</dc:identifier>
   <dc:identifier>urn:scopus_id:85079156421</dc:identifier>
   <dc:identifier>urn:pmid:</dc:identifier>
   <dc:identifier>urn:pmc-uid:7514545</dc:identifier>
   <dc:identifier>urn:pmcid:PMC7514545</dc:identifier>
   <dc:identifier>urn:oai:pubmedcentral.nih.gov:7514545</dc:identifier>
   <dc:identifier>urn:pmid:</dc:identifier>
   <dc:identifier>urn:oai:egreta.uab.cat:publications/d55d8c6d-714f-46a5-b892-4681528537ad</dc:identifier>
   <dc:language>eng</dc:language>
   <dc:relation>Entropy ; Vol. 21 (2019), p. 1-13</dc:relation>
   <dc:rights>open access</dc:rights>
   <dc:rights>Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.</dc:rights>
   <dc:rights>https://creativecommons.org/licenses/by/4.0/</dc:rights>
   <dc:format>application/pdf</dc:format>
   <dc:publisher/>
</oai_dc:dc></metadata></record></GetRecord></OAI-PMH>