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                  <mods:namePart>Migani, Annapaola</mods:namePart>
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                  <mods:namePart>Mowbray, Duncan J.</mods:namePart>
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                  <mods:namePart>Zhao, Jin</mods:namePart>
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                  <mods:namePart>Petek, Hrvoje</mods:namePart>
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               <mods:name>
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                  <mods:namePart>Rubio, Ángel</mods:namePart>
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                  <mods:dateIssued encoding="iso8601">2014</mods:dateIssued>
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               <mods:abstract>Electronic level alignment at the interface between an adsorbed molecular layer and a semiconducting substrate determines the activity and efficiency of many photocatalytic materials. Standard density functional theory (DFT)-based methods have proven unable to provide a quantitative description of this level alignment. This requires a proper treatment of the anisotropic screening, necessitating the use of quasiparticle (QP) techniques. However, the computational complexity of QP algorithms has meant a quantitative description of interfacial levels has remained elusive. We provide a systematic study of a prototypical interface, bare and methanol-covered rutile TiO(110) surfaces, to determine the type of many-body theory required to obtain an accurate description of the level alignment. This is accomplished via a direct comparison with metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), and two-photon photoemission (2PP) spectroscopy. We consider GGA DFT, hybrid DFT, and GW, scQPGW1, scQPGW, and scQPGW QP calculations. Our results demonstrate that GW, or our recently introduced scQPGW1 approach, are required to obtain the correct alignment of both the highest occupied and lowest unoccupied interfacial molecular levels (HOMO/LUMO). These calculations set a new standard in the interpretation of electronic structure probe experiments of complex organic molecule/semiconductor interfaces.</mods:abstract>
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               <mods:accessCondition type="useAndReproduction">open access Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets. https://rightsstatements.org/vocab/InC/1.0/</mods:accessCondition>
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                  <mods:title>Quasiparticle level alignment for photocatalytic interfaces</mods:title>
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