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oai:recercat.cat:2072/4358462024-11-08T23:47:20Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Liu, Fanmao author Fina, Ignasi author Bertacco, Riccardo author Fontcuberta, Josep author 2016 Altres ajuts: 2011 BP-A_2 00014 d'AGAUR-Generalitat de Catalunya Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, E imp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the E imp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating E imp ∼ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of E imp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate E imp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. Ferroelectrics and multiferroics Information storage Photonic devices Unravelling and controlling hidden imprint fields in ferroelectric capacitors