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oai:recercat.cat:2072/4357642024-10-31T03:05:35Zcom_2072_98col_2072_378192

Ptsi clustering in silicon probed by transport spectroscopy Mongillo, Massimo Spathis, Panayotis Katsaros, Georgios De Franceschi, Silvano Gentile, Pascal Rurali, Riccardo Cartoixà Soler, Xavier Atomistic simulations Characteristic size Contact material Discrete energies Quantum transport Schottky barriers Thermal annealing process Transport spectroscopy Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states. 2014 Article https://ddd.uab.cat/record/204729 urn:10.1103/PhysRevX.3.041025 urn:oai:ddd.uab.cat:204729 urn:scopus_id:84893652127 urn:articleid:21603308v3n4e041025 urn:recercauab:ARE-75846 urn:wos_id:000328862000002 urn:altmetric_id:2527945 urn:oai:egreta.uab.cat:publications/1a9c0644-d0f1-41d9-bfe8-ff6f985ad4be eng European Commission 280043 Physical Review ; Vol. 3, issue. 4 (Dec. 2014), art. e041025 open access Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. https://creativecommons.org/licenses/by/4.0/ application/pdf