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oai:recercat.cat:2072/4114332026-03-13T03:27:51Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Claramunt, Sergi author Wu, Qian author Maestro Izquierdo, Marcos author Porti i Pujal, Marc author Bargallo Gonzalez, Mireia author Martin Martinez, Javier author Campabadal, Francesca author Nafría i Maqueda, Montserrat author 2015 Altres ajuts: ERDF/TEC2011-2792-C02-02 Conductive filaments (CFs) in Ni/HfO₂/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homogeneous conduction across the CF area is observed, in agreement with a tree-shaped CF. Resistive switching CAFM Metal-insulator-semiconductor (MIS) Non-homogeneuos conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM