2026-04-13T05:42:03Zhttps://recercat.cat/oai/request

oai:recercat.cat:2072/4018012025-06-13T01:06:30Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Cartoixà Soler, Xavier author Ting, David Z. -Y. author Chang, Y. -C. author American Physical Society author 2003 We present a device concept for a spintronictransistor based on the spin relaxation properties a two-dimensional electron gas(2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information. Electron gas Transistors Ferromagnetism Spintronic devices Ballistics Electron paramagnetic resonance spectroscopy Spin relaxation A resonant spin lifetime transistor