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Integrated tunneling sensor for nanoelectromechanical systems Sadewasser, Sascha Abadal Berini, Gabriel Barniol i Beumala, Núria Dohn, S. Boisen, A. Fonseca Chácharo, Luis Antonio Esteve, Jaume American Physical Society Tunneling Electrodes Nanoelectromechanical systems Microelectromechanical systems Electrostatics Image sensors Infrared detectors Micromachining Silicon detectors Van der Waals forces Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunnelingsensors. Based on this analysis, a tunnelingsensor is fabricated by Si micromachiningtechnology and its proper operation is demonstrated. 2006 Article Applied physics letters ; Vol. 89, Issue 17 (October 2006), p. 173101/1-173101/3 open access Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets. https://rightsstatements.org/vocab/InC/1.0/