2026-04-17T15:00:39Zhttps://recercat.cat/oai/requestoai:recercat.cat:2072/4016782026-04-15T00:28:30Zcom_2072_98col_2072_378192
Electrical characterization of the soft breakdown failure mode in MgO layers
Miranda, E.
O'Connor, Eamon
Hughes, Greg
Casey, Patrick
Cherkaoui, Karim
Monaghan, S.
Long, R.
O'Connell, Deborah
Hurley, Paul K.
American Physical Society
Electrical properties
Dielectric breakdown
Electron beam deposition
Leakage currents
Electrical breakdown
Electric currents
Metal insulator semiconductor structures
Statistical properties
Transport propertiesT
Tunneling
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V)characteristics follow the power-law model I=aVb typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed.
2009
Article
https://ddd.uab.cat/record/116002
urn:10.1063/1.3167827
urn:oai:ddd.uab.cat:116002
urn:recercauab:ARE-53582
urn:articleid:10773118v95n1p12901/1
urn:scopus_id:67650480848
urn:wos_id:000267983200056
urn:oai:egreta.uab.cat:publications/2708a76e-1854-470a-b602-052085bfb4bc
eng
Applied physics letters ; Vol. 95, Issue 1 (July 2009), p. 012901/1-012901/3
open access
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