2026-04-17T02:36:59Zhttps://recercat.cat/oai/requestoai:recercat.cat:2072/4016492025-08-31T09:37:13Zcom_2072_98col_2072_378192
RECERCAT
author
Petti, Daniela
author
Albisetti, Edoardo
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Reichlová, Helena
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Gázquez Alabart, Jaume
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Varela del Arco, María
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Molina Ruiz, Manel
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Lopeandía Fernández, Aitor
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Olejník, Kamil
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Novák, Vít
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Fina, Ignasi
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Dkhil, Brahim
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Hayakawa, Jun
author
Marti, Xavier
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Wunderlich, Jöerg
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Jungwirth, Tomas
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Bertacco, Riccardo
author
American Institute of Physics
2013
In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
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Antiferromagnetism
Tunneling
Magnetic fields
Atomic force microscopy
Ferromagnetism
Magnetic tunnel junctions
Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Article