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oai:recercat.cat:2072/4016492025-08-31T09:37:13Zcom_2072_98col_2072_378192

00925njm 22002777a 4500 dc Petti, Daniela author Albisetti, Edoardo author Reichlová, Helena author Gázquez Alabart, Jaume author Varela del Arco, María author Molina Ruiz, Manel author Lopeandía Fernández, Aitor author Olejník, Kamil author Novák, Vít author Fina, Ignasi author Dkhil, Brahim author Hayakawa, Jun author Marti, Xavier author Wunderlich, Jöerg author Jungwirth, Tomas author Bertacco, Riccardo author American Institute of Physics author 2013 In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. Antiferromagnetism Tunneling Magnetic fields Atomic force microscopy Ferromagnetism Magnetic tunnel junctions Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling