2026-04-13T11:42:20Zhttps://recercat.cat/oai/request

oai:recercat.cat:10256/32972024-06-14T09:36:10Zcom_2072_452955com_2072_2054col_2072_453063

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments Kail, Fatiha Farjas Silva, Jordi Roura Grabulosa, Pere Secouard, Christopher Nos, Oriol Bertomeu, Joan Prat Alzina, F. Roca i Cabarrocas, Pere Amorphous semiconductors Espectroscòpia Raman Hidrogenació Semiconductors amorfs Silici Hydrogenation Raman spectroscopy The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon 2024-06-14T09:36:10Z 2024-06-14T09:36:10Z 2024-06-14T09:36:10Z 2010 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion http://hdl.handle.net/10256/3297 info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3464961 info:eu-repo/semantics/altIdentifier/issn/0021-9606 info:eu-repo/semantics/altIdentifier/eissn/1089-7690 Tots els drets reservats info:eu-repo/semantics/openAccess American Institute of Physics © Applied Physics Letters, 2010, vol. 97, núm. 3, p. 244308 Articles publicats (D-F)