2026-04-18T07:23:44Zhttps://recercat.cat/oai/request

oai:recercat.cat:10256/32122024-06-14T09:36:08Zcom_2072_452955com_2072_2054col_2072_453063

00925njm 22002777a 4500 dc Farjas Silva, Jordi author Rath, Chandana author Pinyol i Agelet, Albert author Roura Grabulosa, Pere author Bertrán Serra, Enric author 2005 A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions http://hdl.handle.net/10256/3212 Materials nanoestructurals Nanopartícules Nitrurs Semiconductors Silici -- Compostos Silici -- Oxidació Nanoparticles Nanostructure materials Nitrides Silicon -- Oxidation Silicon compounds Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation