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oai:recercat.cat:10256/32122024-06-14T09:36:08Zcom_2072_452955com_2072_2054col_2072_453063

2024-06-14T09:36:08Z urn:hdl:10256/3212 Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation Farjas Silva, Jordi Rath, Chandana Pinyol i Agelet, Albert Roura Grabulosa, Pere Bertrán Serra, Enric Materials nanoestructurals Nanopartícules Nitrurs Semiconductors Silici -- Compostos Silici -- Oxidació Nanoparticles Nanostructure materials Nitrides Silicon -- Oxidation Silicon compounds A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions 2024-06-14T09:36:08Z 2024-06-14T09:36:08Z 2005 info:eu-repo/semantics/article http://hdl.handle.net/10256/3212 info:eu-repo/semantics/altIdentifier/doi/10.1063/1.2130380 info:eu-repo/semantics/altIdentifier/issn/0003-6951 info:eu-repo/semantics/altIdentifier/eissn/1077-3118 Tots els drets reservats info:eu-repo/semantics/openAccess American Institute of Physics © Applied Physics Letters, 2005, vol. 87, núm. 19 Articles publicats (D-F)