2026-04-17T03:05:40Zhttps://recercat.cat/oai/requestoai:recercat.cat:10256/30502024-06-14T09:36:04Zcom_2072_452955com_2072_2054col_2072_453063
RECERCAT
author
Costa i Balanzat, Josep
author
Roura Grabulosa, Pere
author
Morante i Lleonart, Joan R.
author
Bertrán Serra, Enric
2024-06-14T09:36:04Z
2024-06-14T09:36:04Z
1998
http://hdl.handle.net/10256/3050
Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation
Tots els drets reservats info:eu-repo/semantics/openAccess
Espectroscòpia de Raman
Fotoluminescència
Semiconductors
Silici
Photoluminescence
Raman spectroscopy
Silicon
Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition
info:eu-repo/semantics/article