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oai:recercat.cat:10256/30502024-06-14T09:36:04Zcom_2072_452955com_2072_2054col_2072_453063

00925njm 22002777a 4500 dc Costa i Balanzat, Josep author Roura Grabulosa, Pere author Morante i Lleonart, Joan R. author Bertrán Serra, Enric author 1998 Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation http://hdl.handle.net/10256/3050 Espectroscòpia de Raman Fotoluminescència Semiconductors Silici Photoluminescence Raman spectroscopy Silicon Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition