To access the full text documents, please follow this link: http://hdl.handle.net/2445/15725
dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Perálvarez Barrera, Mariano José |
dc.contributor.author | Carreras, Josep |
dc.contributor.author | Barreto, Jorge |
dc.contributor.author | Morales, A. (Ángel) |
dc.contributor.author | Domínguez, Carlos (Domínguez Horna) |
dc.contributor.author | Garrido Fernández, Blas |
dc.date | 2011-01-25T13:05:31Z |
dc.date | 2011-01-25T13:05:31Z |
dc.date | 2008-06-17 |
dc.identifier.citation | 1077-3118 |
dc.identifier.citation | 585157 |
dc.identifier.uri | http://hdl.handle.net/2445/15725 |
dc.format | 3 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2939562 |
dc.relation | Applied Physics Letters, 2008, vol. 92, núm. 24, p. 241104-1-241104-3 |
dc.relation | http://dx.doi.org/10.1063/1.2939562 |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS |
dc.rights | (c) American Institute of Physics, 2008 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Microelectrònica |
dc.subject | Semiconductors |
dc.subject | Microelectronics |
dc.subject | Semiconductors |
dc.title | Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |