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| dc.contributor.author | Roura Grabulosa, Pere |
|---|---|
| dc.contributor.author | Vilà Arbonés, Anna |
| dc.contributor.author | Bosch, J. |
| dc.contributor.author | López-de Miguel, Manel |
| dc.contributor.author | Cornet i Calveras, Albert |
| dc.contributor.author | Morante i Lleonart, Joan R. |
| dc.contributor.author | Westwood, D. I. |
| dc.date | 1997 |
| dc.identifier.citation | Roura, P., Vila, A., Bosch, J., Lopez, M., Cornet, A., Morante, J. R., et al. (1997). Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers. Journal of Applied Physics, 82 (3), 1147 - 1152. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v82/i3/p1147_s1 |
| dc.identifier.citation | 0021-8979 |
| dc.identifier.citation | http://dx.doi.org/10.1063/1.365881 |
| dc.identifier.uri | http://hdl.handle.net/10256/3049 |
| dc.format | application/pdf |
| dc.language.iso | eng |
| dc.publisher | American Institute of Physics |
| dc.relation | Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.365881 |
| dc.relation | © Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152 |
| dc.relation | Articles publicats (D-F) |
| dc.rights | Tots els drets reservats |
| dc.subject | Gal·li |
| dc.subject | Compostos d'indi |
| dc.subject | Espectres d'absorció |
| dc.subject | Semiconductors |
| dc.subject | Absorption spectra |
| dc.subject | Gallium |
| dc.subject | Indium compounds |
| dc.title | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers |
| dc.type | info:eu-repo/semantics/article |
| dc.description.abstract |
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