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Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Roura Grabulosa, Pere; Vilà Arbonés, Anna; Bosch, J.; López-de Miguel, Manel; Cornet i Calveras, Albert; Morante i Lleonart, Joan R.; Westwood, D. I.
The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
Gal·li
Compostos d'indi
Espectres d'absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
Tots els drets reservats
Article
American Institute of Physics
         

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