Título:
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Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures
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Autor/a:
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Prieto, J. A.; Armelles Reig, G.; Utzmeier, Thomas; Briones Fernández-Pola, Fernando; Ferrer, J. C.; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the
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and
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critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related
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transitions. |
Materia(s):
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-Matèria condensada -Propietats òptiques -Electrònica quàntica -Condensed matter -Quantum electronics -Optical properties |
Derechos:
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(c) American Physical Society, 1998
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Physical Society
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