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Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
González, T.; Bulashenko, Oleg; Mateos, Javier; Pardo, D.; Reggiani, L. (Lino), 1941-
Universitat de Barcelona
We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.
Transport d'electrons
Soroll electrònic
Semiconductors
Mètode de Montecarlo
Electron transport
Electronic noise
Semiconductors
Monte Carlo method
(c) The American Physical Society, 1997
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