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Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
González, T.; Bulashenko, Oleg; Mateos, Javier; Pardo, D.; Reggiani, L. (Lino), 1941-
Universitat de Barcelona
We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.
Transport d'electrons
Soroll electrònic
Semiconductors
Mètode de Montecarlo
Electron transport
Electronic noise
Semiconductors
Monte Carlo method
(c) The American Physical Society, 1997
Artículo
The American Physical Society
         

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