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Calorimetry of hydrogen desorption from a-Si nanoparticles
Farjas Silva, Jordi; Das, D.; Fort, J.; Roura Grabulosa, Pere; Bertrán Serra, Enric
Universitat de Barcelona
The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.
2010-05-04
Ciència dels materials
Semiconductors amorfs
Pel·lícules fines
Structure of solids and liquids
Materials science
Surfaces and interfaces
Thin films
(c) The American Physical Society, 2002
Article
The American Physical Society
         

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