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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Asensi López, José Miguel |
dc.contributor.author | Andreu i Batallé, Jordi |
dc.date | 2009-10-28T09:34:18Z |
dc.date | 2009-10-28T09:34:18Z |
dc.date | 1993 |
dc.identifier.citation | 0163-1829 |
dc.identifier.citation | 73518 |
dc.identifier.uri | http://hdl.handle.net/2445/9851 |
dc.format | 9 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | The American Physical Society |
dc.relation | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.47.13295 |
dc.relation | Physical Review B, 1993, vol. 47, núm. 20, p. 13295-13303. |
dc.relation | http://dx.doi.org/10.1103/PhysRevB.47.13295 |
dc.rights | (c) The American Physical Society, 1993 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Conductivitat elèctrica |
dc.subject | Propietats tèrmiques |
dc.subject | Semiconductors amorfs |
dc.subject | Electric conductivity |
dc.subject | Thermal properties |
dc.subject | Amorphous semiconductors |
dc.title | Equilibrium and nonequilibrium gap-state distribution in amorphous silicon |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |