Frequency dynamics of gain-switched injection-locked semiconductor lasers

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dc.contributor	Universitat de Barcelona
dc.contributor.author	Dellunde i Clavé, Jaume
dc.contributor.author	Torrent, M. C. (Maria Carme)
dc.contributor.author	Sancho, José M.
dc.contributor.author	San Miguel Ruibal, Maximino
dc.date	2009-06-03T12:06:19Z
dc.date	2009-06-03T12:06:19Z
dc.date	1997
dc.identifier.citation	0018-9197
dc.identifier.citation	118393
dc.identifier.uri	http://hdl.handle.net/2445/8503
dc.format	6 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	IEEE
dc.relation	Reproducció del document publicat a http://dx.doi.org/10.1109/3.622634
dc.relation	IEEE Journal of Quantum Electronics, 1997, vol. 33, núm. 9, p. 1537-1542
dc.relation	http://dx.doi.org/10.1109/3.622634
dc.rights	(c) IEEE, 1997
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Modulació (Electrònica)
dc.subject	Làsers de semiconductors
dc.subject	Modulation (Electronics)
dc.subject	Semiconductor lasers
dc.title	Frequency dynamics of gain-switched injection-locked semiconductor lasers
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The frequency dynamics of gain-switched singlemode semiconductor lasers subject to optical injection is investigated. The requirements for low time jitter and reduced frequency chirp operation are studied as a function of the frequency mismatch between the master and slave lasers. Suppression of the power overshoot, typical during gain-switched operation, can be achieved for selected frequency detunings.