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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Pellegrino, Paolo; Leveque, P.; Hallen, A.; Lalita, J.; Jagadish, C.(Chennupati); Svensson, Bengt G.
Universitat de Barcelona
2010-05-04
Microelectrònica
Dispositius magnètics
Microelectronics
Magnetic devices
(c) The American Physical Society, 2001
Article
The American Physical Society
         

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