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Configurational statistical model for the damaged structure of silicon oxide after ion implantation
Garrido Beltrán, Lluís; Samitier i Martí, Josep; Morante i Lleonart, Joan Ramon; Montserrat i Martí, Josep; Domínguez, Carlos (Domínguez Horna)
Universitat de Barcelona
A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.
Efecte de les radiacions sobre els materials
Espectroscòpia de fotoelectrons
Effect of radiation on materials
Photoelectron spectroscopy
(c) The American Physical Society, 1994
The American Physical Society

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