Título:
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Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers
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Autor/a:
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Roura Grabulosa, Pere; Bosch Estrada, José; Morante i Lleonart, Joan Ramon
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Optical-absorption measurements have been carried out on tensile and compressive
In
x
Ga
1
−
x
As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband
σ
HH
/
σ
LH
is the key to knowing the origin of the microscopic inhomogeneities. So,
σ
HH
/
σ
LH
<1 indicates the existence of composition inhomogeneities whereas
σ
HH
/
σ
LH
=2.8 reveals an inhomogeneous strain field. |
Materia(s):
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-Electrònica de l'estat sòlid -Propietats òptiques -Luminescència -Semiconductors -Microscòpia electrònica de transmissió -Solid state electronics -Optical properties -Semiconductors -Transmission electron microscopy -Photoluminescence |
Derechos:
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(c) The American Physical Society, 1992
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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The American Physical Society
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Compartir:
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