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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Blanchard, Roxann R. |
dc.contributor.author | Alamo, Jesús A. del |
dc.contributor.author | Cornet i Calveras, Albert |
dc.date | 2009-06-19T07:53:20Z |
dc.date | 2009-06-19T07:53:20Z |
dc.date | 2005 |
dc.identifier.citation | 1530-4388 |
dc.identifier.citation | 527741 |
dc.identifier.uri | http://hdl.handle.net/2445/8749 |
dc.format | 4 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | IEEE |
dc.relation | Reproducció del document publicat a http://dx.doi.org/10.1109/TDMR.2005.846825 |
dc.relation | IEEE Transactions On Device And Materials Reliability, 2005, vol. 5, núm. 2, p. 231-234. |
dc.relation | http://dx.doi.org/10.1109/TDMR.2005.846825 |
dc.rights | (c) IEEE, 2005 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Hidrogen |
dc.subject | Espectroscòpia de raigs X |
dc.subject | Transistors |
dc.subject | Hall mobility |
dc.subject | III-V semiconductors |
dc.subject | X-ray spectroscopy |
dc.subject | Failure analysis |
dc.subject | High electron mobility |
dc.subject | Transistors |
dc.subject | Hydrogen |
dc.subject | Indium compounds |
dc.subject | Semiconductor device breakdown |
dc.title | Hydrogen-induced changes in the breakdown voltage of InP HEMTs |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |