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Hydrogen-induced changes in the breakdown voltage of InP HEMTs
Blanchard, Roxann R.; Alamo, Jesús A. del; Cornet i Calveras, Albert
Universitat de Barcelona
2010-05-04
Hidrogen
Espectroscòpia de raigs X
Transistors
Hall mobility
III-V semiconductors
X-ray spectroscopy
Failure analysis
High electron mobility
Transistors
Hydrogen
Indium compounds
Semiconductor device breakdown
(c) IEEE, 2005
Article
IEEE
         

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