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Evidence for two different bonding mechanisms of Al on Si(111)
Illas i Riera, Francesc; Ricart, J. M.; Rubio Martínez, Jaime; Casanovas Salas, Jordi
Universitat de Barcelona
By means of the ab initio cluster-model approach, we present theoretical evidence for two different mechanisms of bonding of atomic Al to Si(111). On the atop site (T1) the interaction of atomic Al to Si(111) is characteristic of an ionic bond whereas interaction above the threefold eclipsed site (T4) leads to the formation of a typical covalent bond. Moreover, both sites have a similar interaction energy if electronic correlation effects are included. While the conclusions regarding the nature of the chemisorption bond in the two sites do not depend either on the cluster-model size, the kind of embedding hydrogen atoms used, or the quality of the wave function (Hartree-Fock or configuration interaction), the chemisorption energy depends strongly on the wave function used. In fact, inclusion of correlation energy is necessary to properly describe the interaction energies.
Química de superfícies
Surface chemistry
(c) The American Physical Society, 1993
The American Physical Society

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