Título:
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Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations
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Autor/a:
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Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation between the degradation of circuit's RF performances and those of its individual devices parameters. The test structure, measurement set-up and procedure are described in detail. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Power amplifiers -Microelectronics -Ageing -CMOS integrated circuits -Integrated circuit design -Integrated circuit testing -Radiofrequency power amplifiers -Amplificadors de potència -Microelectrònica |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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Compartir:
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