Título:
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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
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Autor/a:
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Martinez, Javier; Rodriguez, Rosa; Nafria, Montse; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides
a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and
physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory
write operations and should therefore be taken into account during the memory design phase |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Integrated circuits -Random Telegraph Noise -SRAM -variability -characterization -modeling -Circuits integrats |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Objeto de conferencia |
Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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Compartir:
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