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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAM cells
Martinez, Javier; Rodriguez, Rosa; Nafria, Montse; Torrents, Gabriel; Bota, Sebastian A .; Segura, Jaume; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
Integrated circuits
Random Telegraph Noise
Circuits integrats
Institute of Electrical and Electronics Engineers (IEEE)

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