Silicon micromachined RF passive components such as washers, waveguide with 90 degree bends for 325-500 GHz band, and silicon-stacked blocks for W-band (75-110 GHz) GaAs power amplifiers have been designed, microfabricated, and characterized. Based on these results, we have successfully stacked several silicon micromachined wafers in order to build a Receiver-On-a-Chip (ROC) at 560 GHz. To the authors' knowledge, this is the first demonstration of an all integrated silicon micromachined receiver front-end at submillimeter wavelengths. In addition, we have developed silicon microlens antenna which is compatible with the current silicon micromachined ROC. We have also developed wafer-level microlens microfabrication technique.

Peer Reviewed